TITLE

Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor

AUTHOR(S)
Maiti, Bikas; Ming Yin Hao
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1790
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electrical properties of ultrathin oxynitrides formed by thermal nitridation of silicon substrate and chemical vapor deposition. Details on the dielectric integrity of thermal oxide and reoxidized nitrided oxides; Information on electron trapping and interface state generation; Reduction of hydrogen concentration in dielectrics.
ACCESSION #
4221314

 

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