Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells

Jin, R.; Okada, K.
October 1992
Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1745
Academic Journal
Examines the optical nonlinearities in strained-layer indium gallium arsenide/gallium arsenide multiple quantum wells (MQW) through pump-probe spectroscopy. Determination of the carrier density required for absorption saturation; Increase in the top valence-band curvature caused by compressive strain; Removal of lattice matching conditions in MQW.


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