Electron tunneling into epitaxial films of Nd[sub 2-x]Ce[sub x]CuO[sub 4-y]

Homma, M.; Tanda, S.
October 1992
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1724
Academic Journal
Presents the tunneling experiments on the planar junctions of Nd[sub 2-x]Ce[sub x]CuO[sub 4-y]. Measurement of the temperature dependencies of the gap features; Observation of the phonon structures in the normalized conductance curve; Desirability of neutron data at high energy.


Related Articles

  • Perpendicular magnetic tunnel junctions using Co-based multilayers. Tadisina, Z. R.; Natarajarathinam, A.; Clark, B. D.; Highsmith, A. L.; Mewes, T.; Gupta, S.; Chen, E.; Wang, S. // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C703 

    CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) free and reference layers composed of Co/M (where M=Pd or Ni) multilayers have been optimized for high PMA and high tunneling magnetoresistance (TMR). The effects of Co thickness, Pd thickness, and the...

  • Analytical model of the thin-film silicon-on-insulator tunneling field effect transistor. Dobrovolsky, V.; Sizov, F. // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p114513 

    An analytical model of the thin-film silicon-on-insulator tunneling field effect transistor (TFET) is developed. It takes into account the quantum-dimensional effects in Si-film and a tunneling probability change along the transistor p-n + junction. The gate controls the tunneling current,...

  • Spectroscopic measurements of Zeeman splitting of the density of states in high temperature superconducting tunneling junctions. Alvarez, G. A.; Iguchi, I.; Wang, X. L.; Dou, S. X.; Yao, Q. W. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08C912 

    We report c-axis tunneling spectroscopy investigations in high magnetic fields (I-V characteristics and tunneling conductance dI/dV) of high quality planar junctions fabricated from c-axis oriented NdBa2Cu3O7-δ/PrBa2Cu3O7-δ/NdBa2Cu3O7-δ thin film multilayers. The tunneling conductance...

  • Inelastic effects in Cr-Cr[sub 2]O[sub 3]-Pb-Sn[sub x]O[sub y]-Pb double tunnel structures. Stepurenko, Yu. I.; Shaternik, V. E.; Rudenko, É. M. // Low Temperature Physics;Jul2000, Vol. 26 Issue 7, p467 

    Cr-Cr[sub 2]O[sub 3]-Pb-Sn[sub x]O[sub y]-Pb double tunnel junctions in which inelastic tunneling processes occur, are fabricated. The change in the superconducting order parameter in the middle Pb film upon variation of the temperature, film thickness, and resistivity of the Cr[sub 2]O[sub 3]...

  • Spin-dependent tunneling in discontinuous Co–SiO[sub 2] magnetic tunnel junctions. Sankar, Sandra; Berkowitz, A. E.; Smith, David J. // Applied Physics Letters;7/27/1998, Vol. 73 Issue 4 

    Discontinuous magnetic tunnel junctions (DMTJs) are an alternate system to the magnetic tunnel junctions (MTJ) currently being considered for magnetoresistance (MR) sensors. The DMTJs are easier to fabricate and more robust than the MTJs. The nominal film structure is SiO[sub 2](20...

  • Dynamics of phonon-assisted tunneling in a silicon degenerate pn junction. Richardson, W. H. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    The charge distribution and junction voltage on an indirect-band-gap semiconductor tunnel junction (that is in parallel with a resistor and current source) were obtained by solution of the master equation. Expressions for the tunneling rate in a silicon degenerate pn junction are presented....

  • Can barriers with inverted tunneling rates lead to subband population inversion? Helm, M.; Allen, S. J. // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1368 

    When the conduction-band edge of the quantum wells in a superlattice is close to the valence-band edge of the barriers, the tunneling probabilities out of the quantum well states can be inverted. We examine if this feature can be exploited to achieve intersubband population inversion. If correct...

  • All refractory light-sensitive superconductive junctions. Granata, C.; Russo, M.; Testa, G. // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3790 

    Presents a study which developed a procedure for fabricating all refractory superconducting tunnel junctions with a semiconducting barrier. Principle behind the procedure; Steps in the procedure; Experimental application and results.

  • Preparation of self-aligned in-line tunnel junctions for applications in single-charge electronics. Götz, M.; Blüthner, K.; Krech, W.; Nowack, A.; Fuchs, H.-J.; Kley, E.-B.; Thieme, P.; Wagner, Th.; Eska, G.; Hecker, K.; Hegger, H. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5499 

    Presents information on a study which applied the self-aligned technique to the preparation of ultrasmall low-capacitance metallic tunnel junctions. Steps of the self-aligned in-line technique; Sample preparation; Experimental results.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics