Observation of deep-level-free band edge luminescence and quantum confinement in strained

Usami, N.; Fukatsu, S.
October 1992
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1706
Academic Journal
Examines the deep-level-free band edge luminescence of strained silicon germanide (SiGe) and silicon single quantum wells. Identification of no-phonon transitions due to symmetry-breaking alloy disordering in SiGe layers; Absence of the defect-related deep level emissions; Presence of a systematic blue shift in the no-phonon and transverse optical.


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