Optical investigations of GaAs-GaInP quantum wells grown on the GaAs, InP, and Si substrates

Xiaoguang He; Razeghi, Manijeh
October 1992
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1703
Academic Journal
Investigates the gallium arsenide-gallium indium phosphide quantum wells grown on gallium arsenide, indium phosphide and silicon substrates. Presence of three photoluminescence peaks; Dependence of the photoluminescence on temperature; Diffusion of indium along the dislocation threads.


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