Investigation of In[sub 0.53]Ga[sub 0.47]As/AlAs resonant tunneling diodes for high speed switching

Chow, D.H.; Schulman, J.N.
October 1992
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1685
Academic Journal
Investigates indium gallium arsenide and aluminum arsenide resonant tunneling diodes. Application of the tunneling diodes for high speed switching; Rise of the peak current densities with the reduction of the aluminum arsenide barrier thickness; Demonstration of the controllability of swing voltages over the range of 0.5 to 1.0 volts.


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