TITLE

Deep levels induced by high-energy boron ion implantation into p-silicon

AUTHOR(S)
Sayama, H.; Takai, M.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1682
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the deep energy levels induced by high-energy boron ion implantation into p-silicon. Utilization of leakage current and deep level transient spectroscopy in the study; Discovery of two hole trap levels in the shallower region; Dependence of the existence of deep levels on the implantation dose.
ACCESSION #
4221281

 

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