Defects in low-temperature-grown GaAs annealed at 800 degrees C

Ohbu, I.; Takahama, M.
October 1992
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1679
Academic Journal
Investigates the annealing of gallium arsenide at 800 degrees Celsius. Examination of the optical properties of the annealed gallium arsenide; Discovery of three kinds of defects in the gallium arsenide; Rise of the concentration of gallium vacancies.


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