TITLE

Defects in low-temperature-grown GaAs annealed at 800 degrees C

AUTHOR(S)
Ohbu, I.; Takahama, M.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1679
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the annealing of gallium arsenide at 800 degrees Celsius. Examination of the optical properties of the annealed gallium arsenide; Discovery of three kinds of defects in the gallium arsenide; Rise of the concentration of gallium vacancies.
ACCESSION #
4221280

 

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