TITLE

Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system

AUTHOR(S)
Liu, W.H.; Leighton, J.D.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1676
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effects of arsine on the germanium silicate growth rate and doping. Consistency of the growth-rate data with a second-order reaction; Measurement of the electron carrier concentration and mobility; Comparison of the electron carrier concentration to similar data from silicon growth.
ACCESSION #
4221279

 

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