TITLE

N- and p-type in-plane gated field effect transistors directly written on a semi-insulating GaAs

AUTHOR(S)
Hirayama, Y.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1667
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the in-plane gated field effect transistor. Utilization of the semi-insulating substrate as a gate insulator region; Fabrication of the field effect transistors on a semi-insulating gallium arsenide substrate; Operation of the field effect transistors at room temperature.
ACCESSION #
4221276

 

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