TITLE

Molecular-beam-epitaxial growth of n-AlGaAs on clean Cl[sub 2]-gas etched GaAs surfaces and the

AUTHOR(S)
Kadoya, Y.; Noge, H.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1658
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the molecular-beam-epitaxial growth of n-aluminum gallium arsenide. Formation of high mobility two-dimensional electron gas; Preparation of the gallium arsenide surface; Estimation of the carbon concentration at the interface.
ACCESSION #
4221273

 

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