Photoemission study of porous silicon
Related Articles
- Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects. Wu, X.L.; Gu, Y. // Journal of Applied Physics;7/1/1999, Vol. 86 Issue 1, p707
Examines the photoluminescence (PL) spectra of porous silicon (PS) coated with germanium (Ge) films using argon (Ar) laser. Energy range of the material; Maximal intensity; Identification of PL origin.
- Anomalous photoluminescence behavior of porous Si. Stevens, P.D.; Glosser, R. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p803
Investigates the photoluminescence behavior of porous silicon etched with high acid concentrations. Mechanism for increasing photoluminescence intensity; Degradation of photoluminescence intensity at higher point density; Excitation of metastable states within the band structure of porous silicon.
- Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration. Tanaka, Satoshi; Koyama, Hideki; Koshida, Nobuyoshi // Applied Physics Letters;10/19/1998, Vol. 73 Issue 16
We have measured the photoluminescence (PL) decay properties of porous silicon (PS) samples subjected to ion irradiation up to a dose of 10[sup 15] cm[sup -2] at 30 kV. It is found that while the PL intensity decreases down to 1/100 of the initial value due to induced nonradiative...
- Photoluminescence and its decay of the dye/porous-silicon composite system. Li, Peng; Li, Qingshan // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p490
Studies the photoluminescence (PL) and its decay in the composite system of dye/porous silicon, consisting of oxidized porous silicion (PSi) and impregnated dyes. Preparation of the PSi samples; Spectra of Rh B in different states.
- Effect of resistivity and current density on photoluminescence in porous silicon produced at low... Gaburro, Zeno; You, Hoydoo // Journal of Applied Physics;12/1/1998, Vol. 84 Issue 11, p6345
Presents information on an experimental study of the intensity of photoluminescence (PL) of porous silicon (PSi) prepared from an anodic dissolution of Si at low Hartree-Fock (HF) concentration. Methodology of the study; Discussion of the result.
- Optical properties and luminescence mechanism of oxidized free-standing porous silicon films. Xu, Dongsheng; Guo, lin // Journal of Applied Physics;8/15/1999, Vol. 86 Issue 4, p2066
Outlines an experiment that have systematically studied the evolution of the optical properties of free-standing porous silicon films during external oxidation by measuring of the photoluminescence (PL), infrared, optical absorption and Raman scattering spectra. Experiment; PL intensity and...
- Correlation of surface morphology with luminescence of porous Si films by scanning tunneling.... Enachescu, M.; Hartmann, E.; Koch, F. // Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1365
Demonstrates the evolution of visible photoluminescence of porous silicon films. Study of surface structure on a nanometer scale; Use of scanning tunneling microscopy; Preparation of samples under several conditions; Correlation between surface morphology and luminescence.
- Photoluminescence and Auger spectroscopy of porous Si: Solvent, reactive ion etching, annealing, and substrate boron level effects. Shinar, R.; Robinson, D. S.; Partee, J.; Lane, P. A.; Shinar, J. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3403
Presents information on a study which described the photoluminescence of boron-doped porous silicon films and reactive ion etched films. Experimental procedure; Results; Discussion.
- Photoluminescence of oxygen-passivated porous silicon analyzed by wideband quadrature frequency resolved spectroscopy. Aoki, T.; Kaneko, T.; Sakamoto, T.; Kobayashi, S. // Journal of Materials Science: Materials in Electronics;Oct2007 Supplement, Vol. 18, p201
Wideband quadrature frequency spectroscopy (QFRS) reveals that the photoluminescence (PL) lifetime distribution of porous silicon (PS) is inherently double-peaked in structure. The main peak is the well-known S-band PL peak with a lifetime of a few tens μs at room temperature that changes to...
