Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy

Ramdani, J.; He, Y.
October 1992
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1646
Academic Journal
Investigates the low-temperature (LT) growth of high resistivity gallium phosphide (GaP). Utilization of the gas-source molecular beam epitaxy in the process; Comparison of the lattice constant of the LT GaP films and GaP substrates grown at high temperature; Resistivity of the films with semi-insulating GaP substrate.


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