Growth of epitaxial Pb(Zr,Ti)O[sub 3] films by pulsed laser deposition

Lee, J.; Safari, A.
October 1992
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1643
Academic Journal
Investigates the growth of lead zirconate titanate thin films. Utilization of pulsed laser deposition in the process; Creation of the ferroelectric films with a perovskite structure; Measurement of the dielectric constant.


Related Articles

  • Epitaxial structure SrTiO[sub 3]<011> on Si<001>. Migita, S.; Sakai, S. // Journal of Applied Physics;5/15/2001, Vol. 89 Issue 10, p5421 

    An epitaxial structure, <011>-oriented SrTiO[sub 3] film on Si<001> substrate, is developed by inserting an epitaxial Ce[sub 0.12]Zr[sub 0.88]O[sub 2] buffer layer. Films are prepared by pulsed-laser deposition and evaluated by x-ray diffraction. Origin of this epitaxial growth is considered as...

  • Anion-assisted pulsed laser deposition of lead zirconate titanate films. Leuchtner, R.E.; Grabowski, K.S. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1193 

    Describes the modified pulsed laser deposition technique. Placement of the electron emitting filament over the substrate during deposition; Deposition of oriented films of the ferroelectric perovskite on magnesium oxide substrates; Optimization of the filament; Changes of the surface...

  • Near single crystal-level dielectric loss and nonlinearity in pulsed laser deposited SrTiO[sub 3] thin films. Li, Hong-Cheng; Si, Weidong; West, Alexander D.; Xi, X. X. // Applied Physics Letters;7/13/1998, Vol. 73 Issue 2 

    We present low-frequency dielectric loss and nonlinearity measurements in SrTiO[sub 3] thin films grown by pulsed laser deposition on SrRuO[sub 3] electrode layers. A low loss tangent in the order of 10[sup -4], close to the level found in SrTiO[sub 3] single crystals, was observed. Combined...

  • Ferroelectric silver niobate-tantalate thin films. Koh, Jung-Hyuk; Jung-Hyuk Koh; Khartsev, S. I.; Khartsev, S.I.; Grishin, Alex // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    Submicron thick ferroelectric AgTa[sub 0.38]Nb[sub 0.62]O[sub 3] (ATN) films have been prepared by pulsed laser deposition technique onto Pt[sub 80]Ir[sub 20] polycrystalline and La[sub 0.7]Sr[sub 0.3]CoO[sub 3]/LaAlO[sub 3] single crystal substrates. ATN/Pt[sub 80]Ir[sub 20] films have been...

  • Preferential orientation of modified SrBi[sub 2] Nb[sub 2] O[sub 9] ferroelectric thin films prepared by pulsed laser deposition. Volkov, V.; Vasco, E.; Durán-Martín, P.; Zaldo, C. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS833 

    Abstract. We report on the deposition of SrBi[sub 2]Nb[sub 2]O[sub 9] and Sr[sub 1-x]Na[sub x]Bi[sub 2-x]Te[sub x]Nb[sub 2]O[sub 9] ferroelectric thin films on Pt/TiO[sub 2]/SiO[sub 2]/(100)Si substrates using the pulsed laser deposition technique. Deposition on substrates heated to 600-700...

  • Electrically and magnetically tunable microwave device using (Ba, Sr) TiO[sub 3] /Y[sub 3] Fe[sub 5] O[sub 12] multilayer. Kim, W.J.; Chang, W.; Qadri, S.B.; Wu, H.D.; Pond, J.M.; Kirchoefer, S.W.; Newman, H.S.; Chrisey, D.B.; Horwitz, J.S. // Applied Physics A: Materials Science & Processing;2000, Vol. 71 Issue 1, p7 

    Abstract. Ferroelectric (Ba[sub 0.6]Sr[sub 0.4])TiO[sub 3] (BST) thin films have been deposited by pulsed laser deposition onto singlecrystal Y[sub 3]Fe[sub 5]O[sub 12] (YIG) substrates with/without a MgO buffer layer. The structure and microwave properties of the BST films have been...

  • Enhanced multiferroic properties of the high-valence Pr doped BiFeO3 thin film. Yu, Benfang; Li, Meiya; Hu, Zhongqiang; Pei, Ling; Guo, Dongyun; Zhao, Xingzhong; Dong, Shuxiang // Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182909 

    High-valence Pr-doped BiFeO3 (BPF) multiferroic thin film was prepared by pulsed laser deposition on a Pt/TiO2/SiO2/Si substrate. X-ray diffraction analysis indicates that the BPF film is of pure phase with a polycrystalline perovskite structure. The BPF film exhibited enhanced multiferroic...

  • Dielectric properties of Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered films grown by pulsed laser deposition. Fu, Wangyang; Cao, Lingzhu; Wang, Shufang; Sun, Zhihui; Cheng, Bolin; Wang, Qian; Wang, Hong // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p132908 

    Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered films have been deposited on (111) Nb:SrTiO3 substrate by pulsed laser deposition. The heterolayered films were found to possess a medium permittivity around 200, a low loss tangent of 0.0025, and a relatively high tunability up to 25%...

  • (100) MgAl2O4 as a lattice-matched substrate for the epitaxial thin film deposition of the relaxor ferroelectric PMN-PT. Keogh, D.; Chen, Z.; Hughes, R. A.; Dabkowski, A.; Marinov, O.; Maunders, C.; Gunawan, L.; Deen, M. J.; Preston, J. S.; Botton, G. A. // Applied Physics A: Materials Science & Processing;Jan2010, Vol. 98 Issue 1, p187 

    The (100) surface of MgAl2O4 is evaluated as a substrate for the thin film deposition of the relaxor ferroelectric PbMg1/3Nb2/3O3(65%)–PbTiO3(35%). With a lattice mismatch of less than 0.5%, this film-substrate combination presents a geometrical template for growth that is far superior to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics