X-ray damage in low temperature ultrathin silicon dioxide

Lee, K.H.; Campbell, S.A.
October 1992
Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1635
Academic Journal
Investigates the x-ray damage in low temperature ultrathin silicon dioxide. Derivation of the interface trap density of the fresh oxide; Presence of the lower interface trap density of oxides grown at 950 degrees Celsius; Sensitivity of the 950 degrees Celsius oxide to x-ray radiation damage.


Related Articles

  • New channels of photon echo relaxation in Y[sub 2]SiO[sub 5]: Pr[sup 3+] and LaF[sub 3]... Malyukin, Yu. V. // Low Temperature Physics;Sep97, Vol. 23 Issue 9, p746 

    Investigates the low-temperature optical absorption spectra and temperature dependence of the photon echo (PE) amplitude signal in crystals. Existence of the additional relaxation channels for PE; Scattering of phonons involving the energy sublevels closest to the resonance transition;...

  • Plastic-deformation-induced low-temperature anomalies of the resistivity of polycrystalline copper and aluminum. Dmitriev, V. M.; Lebedeva, I. L.; Prentslau, N. N. // Low Temperature Physics;Jun2001, Vol. 27 Issue 6, p484 

    The temperature dependence of the electrical resistivity ρ of pure polycrystalline aluminum and copper after plastic deformation is investigated in the temperature interval 4.2-300 K. Using heat treatment as a tool for changing the crystallite size d and structural perfection of the sample,...

  • Low-temperature thermopower in quasiamorphous carbons. Matsuí, L. Yu.; Vovchenko, L. L.; Ovsienko, I. V. // Low Temperature Physics;Jan2000, Vol. 26 Issue 1 

    Results are presented from a study of the thermopower of quasiamorphous carbons in the temperature interval from 20 to 200 K. It is shown that the thermopower of quasiamorphous carbons is described satisfactorily in a model based on the series connection of regions with metallic conductivity,...

  • On the mechanism of transformation of icosahedral rare-gas clusters into fcc aggregations. Kovalenko, S. I.; Kovalenko, S.I.; Solnyshkin, D. D.; Solnyshkin, D.D.; Verkhovtseva, É. T.; Verkhotseva, E.T. // Low Temperature Physics;Mar2000, Vol. 26 Issue 3 

    The experimental diffraction patterns from Kr cluster beams are compared with the diffraction functions calculated for rare-gas clusters with dimensions of 3x10[sup 3] and 1x10[sup 4] atoms/cluster. The experimental results are found to correlate well with the calculation if it is assumed that...

  • Xenon excimer compounds with oxygen in inert-gas crystal matrices. Belov, A. G.; Yurtaeva, E. M. // Low Temperature Physics;Nov2001, Vol. 27 Issue 11, p938 

    Xenon excimer compounds with oxygen in low-temperature inert-gas (R) crystal matrices are investigated. The transformation of the excimer emission spectrum as a reslt of a change in the Xe concentration is analyzed. It is shown that the luminescence band with a peak near 1.7 eV could be due to...

  • Reactive ion-beam deposition and cleaning system. Yamada, Hiroshi // Review of Scientific Instruments;Jun89, Vol. 60 Issue 6, p1169 

    A reactive ion-beam deposition (RIBD) and cleaning (RIBC) system using low-temperature crystalline film growth and substrate cleaning is described. The RIBD and RIBC methods use low-energy-controlled ionized species produced from electron-cyclotron-resonance (ECR) plasma of reactive gases. The...

  • Search for the minimum thermal conductivity in mixed cryocrystals (CH[sub 4])[sub 1-ξ]Kr[sub ξ]. Konstantinov, V. A.; Manzhelii, V. G.; Revyakin, V. P.; Pohl, R. O. // Low Temperature Physics;Sep/Oct2001, Vol. 27 Issue 9/10, p858 

    The isochoric thermal conductivity of (CH[sub 4])[sub 1 - ξ]Kr[subξ] solid solutions is studied between 40 K and ˜150 K over a wide range of concentrations (ξ = 0.013, 0.032, 0.07, 0.115, 0.34, 0.71, 0.855, 0.937, and 0.97). A gradual transition from the thermal conductivity of a...

  • Near-band-gap luminescence from a GaAs-AlGaAs interface. ’t Hooft, G. W.; van der Poel, W. A. J. A.; Molenkamp, L. W.; Foxon, C. T. // Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1388 

    We report on low-temperature photoluminescence from an ultrapure GaAs-Al0.33Ga0.67As heterostructure grown with molecular beam epitaxy. A luminescence band centered at 1.509–1.510 eV is observed. In spectral shape and polarization this band distinguishes itself from the defect related...

  • The influence of quantum-mechanical athermal phenomena on the thermal instability of plastic deformation in crystals at low temperatures. Malygin, G. A. // Physics of the Solid State;Aug97, Vol. 39 Issue 8, p1235 

    The way in which athermal (quantum) mechanisms that allow dislocations to overcome local barriers affect the thermal instability of plastic deformation of crystals is discussed theoretically for the case of low and ultralow (< 1 K) temperatures. Calculations show that increasing the athermal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics