TITLE

Surfactant mediated epitaxial growth of In[sub x]Ga[sub 1-x]As on GaAs (001)

AUTHOR(S)
Massies, J.; Grandjean, N.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p99
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the surfactant mediated epitaxial growth of indium-gallium arsenide (InGaAs) on GaAs. Efficiency of surfactants in improving the epitaxial growth of strained systems; Use of x-ray photoelectron spectroscopy; Mechanism of surfactant action of tellurium.
ACCESSION #
4221250

 

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