TITLE

Low threshold current InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy

AUTHOR(S)
Zhang, G.; Nappi, J.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p96
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the low threshold current indium-gallium arsenide/gallium arsenide/gallium-indium phosphide (InGaAs/GaAs/GaInP) lasers grown by gas-source molecular beam epitaxy. Fabrication of InGaAs/GaAs/GaInP lasers with three quantum wells; Advantages of replacing the AlGaAs cladding layers of the lasers; Effects of the nonuniform strain relaxation in the InGaAs quantum well.
ACCESSION #
4221249

 

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