Effect of silicon source gas on silicon-germanium chemical vapor deposition kinetics at

Kamins, T.I.; Meyer, D.J.
July 1992
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p90
Academic Journal
Examines the effect of silicon source gas on silicon-germanium (SiGe) chemical vapor deposition kinetics at atmospheric pressure. Details on the deposition kinetics of SiGe alloy layers on Si; Deposition rate of the Si content; List of Si-source gases.


Related Articles

  • Observation of Si2 in a chemical vapor deposition reactor by laser excited fluorescence. Ho, Pauline; Breiland, William G. // Applied Physics Letters;1984, Vol. 44 Issue 1, p51 

    For the first time an intermediate chemical species, Si2, has been observed in the gas phase during the chemical vapor deposition of silicon from silane. This observation is inconsistent with previous theoretical models for silicon deposition, which assume that either thermodynamic equilibrium...

  • Dicing of SiC wafer by atmospheric-pressure plasma etching process with slit mask for plasma confinement. Yasuhisa Sano; Hiroaki Nishikawa; Yu Okada; Kazuya Yamamura; Satoshi Matsuyama; Kazuto Yamauchi // Materials Science Forum;2014, Vol. 778-780, p759 

    Silicon carbide (SiC) is a promising semiconductor material for high-temperature, high-frequency, high-power, and energy-saving applications. However, because of the hardness and chemical stability of SiC, few conventional machining methods can handle this material efficiently. A plasma chemical...

  • Next generation of Ge1-ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission. Grzybowski, G.; Beeler, R. T.; Jiang, L.; Smith, D. J.; Kouvetakis, J.; Menéndez, J. // Applied Physics Letters;8/13/2012, Vol. 101 Issue 7, p072105 

    Film growth and reaction kinetics studies have shown that trigermane (Ge3H8) is a superior Ge source for the epitaxial synthesis of Ge1-ySny/Si(100) alloys using ultra-high vacuum chemical vapor deposition. The Ge3H8/SnD4 combination yields 3-4 times higher growth rates than the traditional...

  • Ge assisted SiC epitaxial growth by CVD on SiC substrate. Alassaad, Kassem; Soulière, Véronique; Doisneau, Beatrice; Cauwet, François; Peyre, Herve; Carole, Davy; Chaussende, Didier; Ferro, Gabriel // Materials Science Forum;2014, Vol. 778-780, p187 

    This paper presents the results obtained after chemical vapor deposition of SiC with the addition of GeH4 gas to the classical SiH4+C3H8 precursor system. Epitaxial growth was performed either on 8°off-axis or on-axis 4H-SiC substrate in the temperature range 1500-1600°C. In the offaxis...

  • Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition. Lenski, Daniel R.; Fuhrer, Michael S. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p013720 

    We synthesize large-area graphene via atmospheic-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure CVD on copper, optical contrast and atomic force microscopy measurements show AP-CVD graphene contains significant multi-layer areas....

  • Ultrahigh conductivity of large area suspended few layer graphene films. Rouhi, Nima; Wang, Yung Yu; Burke, Peter J. // Applied Physics Letters;12/24/2012, Vol. 101 Issue 26, p263101 

    Room-temperature (atmospheric-pressure) electrical conductivity measurements of wafer-scale, large-area suspended (few layer) graphene membranes with areas up to 1000 μm2 (30 μm × 30 μm) are presented. Multiple devices on one wafer can be fabricated with high yield from the same...

  • Tailor-made surfaces by means of inline plasma coating at atmospheric pressure. Ramm, Max; Pfuch, Andreas; Beier, Oliver; Spange, Sebastian; Schimanski, Arnd // Technical Textiles / Technische Textilen;May2014, Vol. 57 Issue 2, pE71 

    The article discusses about surface treatment through atmospheric pressure chemical vapor deposition (APCVD) coating technology and combustion chemical vapor deposition (CCVD) flame technology and focuses on plasma coating at atmospheric pressure. Topics include the use of PlasmaBlaster MEF...

  • Graphene as a transparent conducting and surface field layer in planar Si solar cells. Kumar, Rakesh; Mehta, Bodh; Bhatnagar, Mehar; S, Ravi; Mahapatra, Silika; Salkalachen, Saji; Jhawar, Pratha // Nanoscale Research Letters;Dec2014, Vol. 9 Issue 1, p1 

    This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p- n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350...

  • Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp. Kumata, Ken; Itoh, Uichi; Toyoshima, Yasutake; Tanaka, Naoki; Anzai, Hiroyuki; Matsuda, Akihisa // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1380 

    The photolysis of disilane (Si2H6) and trisilane (Si3H8) under direct excitation by light from a low pressure mercury lamp was carried out to prepare hydrogenated amorphous silicon films (a-Si:H). The electronic and optical properties of the films were investigated as functions of preparation...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics