Measurement of Schottky barrier energy on InGaP and InGaAlP films lattice matched to GaAs

Nanda, A.; Hafich, M.J.
July 1992
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p81
Academic Journal
Analyzes the measurement of Schottky barrier energy on indium-gallium phosphide (InGaP) and indium-gallium-aluminum phosphide films matched to gallium arsenide. Fabrication of the Schottky diodes; Methods used to determine the band-gap energy and alloy composition; Factors influencing the energy gap of InGaP.


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