Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial films

Hobart, K.D.; Godbey, D.J.
July 1992
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p76
Academic Journal
Investigates the post-growth annealing of low temperature-grown antimony (Sb)-doped silicon molecular beam epitaxial films. Ways to monitor the replication of substrate temperature; Indications of the increase in carrier density and reduction in mobility at the highest annealing temperature; Effect of the furnace annealing in Sb.


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