Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by

Hong, M.; Chen, Y.K.
July 1992
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p43
Academic Journal
Analyzes the periodic index separate confinement heterostructures (PINSCH) of quantum well lasers grown by temperature modulation molecular beam epitaxy (MBE). Characteristics of the PINSCH lasers; Use of substrate temperature modulation MBE; Approaches used for the growth of the periodic index layers.


Related Articles

  • Role of thin multiquantum wells in controlling intrinsic interface quality in molecular beam epitaxially grown heterostructures. Singh, Jasprit; Bajaj, K. K. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p594 

    A model based on Monte Carlo simulations and theory of statistical fluctuations is presented for molecular beam epitaxy growth of III-V semiconductors. It is shown that under normally employed growth conditions, cation surface migration controls the surface (interface) quality. The surface of a...

  • Blue-green ZnSe lasers with a new type of active region. Ivanov, S. V.; Toropov, A. A.; Sorokin, S. V.; Shubina, T. V.; Sedova, I. V.; Kop�ev, P. S.; Alferov, Zh. I.; Waag, A.; Lugauer, H. J.; Reuscher, G.; Keim, M.; Fischer, F. F.; Landwehr, G. // Semiconductors;Sep99, Vol. 33 Issue 9, p1016 

    We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractionalmonolayer CdSe recombination region in an expanded ZnSe quantum well and a waveguide based on a variably-strained,...

  • The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes. Kotel�nikov, E. Yu.; Katsnel�son, A. A.; Kudryashov, I. V.; Rastegaeva, M. G.; Richter, W.; Evtikhiev, V. P.; Tarasov, I. S.; Alferov, Zh. I. // Semiconductors;Nov2000, Vol. 34 Issue 11, p1341 

    The InGaAs/AlGaAs/GaAs double laser heterostructures of separate confinement with a quantum well were formed by molecular-beam epitaxy. The study of characteristics of laser diodes with a wide contact (100 �m) showed that the power corresponding to the catastrophic degradation of mirrors...

  • Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy. Mahavadi, K. K.; Bleuse, J.; Sivananthan, S.; Faurie, J. P. // Applied Physics Letters;5/21/1990, Vol. 56 Issue 21, p2077 

    We present the results of low-temperature photoluminescence and stimulated emission experiments performed on a CdTe/Hg0.45Cd0.55Te/Hg0.67Cd0.33Te multiquantum well separate confinement heterostructure grown by molecular beam epitaxy. The photoluminescence results suggest that because of the...

  • Low-threshold 1.3-mum wavelength, InGaAsP strained-layer multiple quantum well lasers grown by.... Guang-Jye Shiau; Chih-Ping Chao // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p892 

    Describes the growth of low-threshold 1.3-micrometer wavelength strained-layer indium gallium arsenic phosphide heterostructure quantum well lasers. Application of gas source molecular beam epitaxy; Value of the lowest threshold current density; Use of silicon-doped (100) indium phosphide...

  • The effect of a “Coulomb well” on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures. Kavokin, A. V.; Kokhanovskiı, S. I.; Nesvizhkiı, A. I.; Sasin, M. É.; Seısyan, R. P.; Ustinov, V. M.; Egorov, A. Yu.; Zhukov, A. E.; Gupalov, S. V. // Semiconductors;Sep97, Vol. 31 Issue 9, p950 

    The optical and magnetooptical properties of strained InGaAs/GaAs quantum-well heterostructures grown by molecular-beam epitaxy were studied at T=1.7 K in magnetic fields B≤7.5 T. The well-resolved oscillatory structure of the magnetoabsorption spectra makes it possible to reproduce the...

  • Reflectivity of GaSb-AlSb quantum-well structures in the range 2–5 eV. Ance, C.; Raisin, C.; Ferraton, J. P. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3088 

    Presents a study which detailed the reflectance spectra of two GaSb-AlSb quantum-well structures in the range of 2-5 eV at different temperatures. Description of the function of molecular-beam epitaxy; Reference to the GaSb-AlSb structure; Use of the confinement effects in the type-II...

  • GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm. Tournié, E.; Pinault, M.-A.; Laügt, M.; Chauveau, J.-M.; Trampert, A.; Ploog, K. H. // Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1845 

    We demonstrate that a careful optimization of the molecular-beam-epitaxy growth conditions allows us to obtain high-quality GaInNAs/GaAs quantum-well (QW) heterostructures exhibiting a perfect two-dimensional microstructure at high In and N contents. Room-temperature emission is achieved up to...

  • Fabrication and optical properties of Si/CaF2(111) multi-quantum wells. Bassani, F.; Vervoort, L.; Mihalcescu, I.; Vial, J. C.; d’Avitaya, F. Arnaud // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4066 

    Provides information on a study which synthesized, by molecular beam epitaxy, silicon calcium fluoride[sub2](111) multi-quantum wells which are photoluminiscent at room temperature after aging in air. Structural properties of the heterostructures; Photoluminescence spectra; Discussion of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics