TITLE

Physical model for defect mediated boron diffusion during rapid thermal annealing of ion

AUTHOR(S)
Kinoshita, H.; Kwong, D.L.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p25
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the physical model for defect mediated boron (B) diffusion during rapid thermal annealing of ion implantation. Effects of implant damage, surface amorphization and fluorine atoms on B diffusion; Difference in the diffusion between B and boron-fluorine implant; Relationship of the amorphous layer thickness and defect concentrations on the simulated diffusion profile.
ACCESSION #
4221225

 

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