Improved InP regrowth properties in metalorganic vapor phase epitaxy by addition of CCl[sub 4]

Nordell, N.; Borglind, J.
July 1992
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p22
Academic Journal
Analyzes the improved indium phosphide (InP) regrowth properties in metalorganic vapor phase epitaxy by addition of CCl[sub 4]. Importance of epitaxial regrowth in the fabrication of laser diodes for high speed operation; Use of CCl[sub 4] for regrowth of InP; Influence of CCl on the doping level.


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