Carrier-induced change in index, gain, and lifetime for (InAs)[sub 1]/(GaAs)[sub 4] superlattice

Dutta, N.K.; Chand, N.
July 1992
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p7
Academic Journal
Examines the carrier density dependence of refractory gain, index and carrier lifetime for indium arsenide/gallium arsenide superlattice lasers. Determination of the carrier density as a function of current; Fabrication of the ridge waveguide laser from the wafer; Mechanisms for the short-period superlattice structure.


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