TITLE

Carrier-induced change in index, gain, and lifetime for (InAs)[sub 1]/(GaAs)[sub 4] superlattice

AUTHOR(S)
Dutta, N.K.; Chand, N.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the carrier density dependence of refractory gain, index and carrier lifetime for indium arsenide/gallium arsenide superlattice lasers. Determination of the carrier density as a function of current; Fabrication of the ridge waveguide laser from the wafer; Mechanisms for the short-period superlattice structure.
ACCESSION #
4221219

 

Related Articles

  • Energetics of bcc-fcc lattice in Fe-Co-Ni compounds (abstract). Moroni, E. G.; Jarlborg, T. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p7034 

    Presents abstracts of two studies. Abstract of study that applied the linear muffin tin orbital method to compute the energy properties of several ordered binary iron-nickel, iron-cobalt and ternary iron-nickel-cobalt compounds near the bcc-fcc transition, from first principles; Abstract of a...

  • Analysis of low-level laser therapy doses in Brazilian equipment. T. Y., Fukuda; C. A., Malfatti // Brazilian Journal of Physical Therapy / Revista Brasileira de Fi;jan/fev2008, Vol. 12 Issue 1, p70 

    Introduction: Low-level laser therapy is becoming more popular and there is a growing interest in its effects, as reflected in the increased number of articles published about the subject. Many therapists and researchers have used a laser dose definition based on energy density (?E). However,...

  • Electronic transport of titanate heterostructures and their potential as channels on (001) Si. Kornblum, Lior; Jin, Eric N.; Shoron, Omor; Boucherit, Mohamed; Rajan, Siddharth; Ahn, Charles H.; Walker, Fred J. // Journal of Applied Physics;2015, Vol. 118 Issue 10, p105301-1 

    Perovskite oxides and their heterostructures have demonstrated considerable potential for devices that require high carrier densities. These oxides are typically grown on ceramic substrates that suffer from low thermal conductivity, which limits performance under high currents, and from the...

  • Plasma wakefields driven by an incoherent combination of laser pulses: A path towards high-average power laser-plasma accelerators. Benedetti, C.; Schroeder, C. B.; Esarey, E.; Leemans, W. P. // Physics of Plasmas;May2014, Vol. 21 Issue 5, p056706-1 

    The wakefield generated in a plasma by incoherently combining a large number of low energy laser pulses (i.e., without constraining the pulse phases) is studied analytically and by means of fully self-consistent particle-in-cell simulations. The structure of the wakefield has been characterized...

  • Static Characterization of InAs/AlGaAs Broadband Self-Assembled Quantum Dot Lasers. Nahri, D. Ghodsi; Arabshahi, H. // Telkomnika;2012, Vol. 10 Issue 1, p55 

    The static-characteristics of InAs/AlGaAs broadband self-assembled quantum-dot laser diodes (SAQD-LDs) have been studied to solve the rate equations numerically using fourth-order Runge-Kutta method. Energy level, size, and composition distributions of the InAs/AlGaAs broadband quantum-dots...

  • Two-dimensional simulation of a miniaturized inductively coupled plasma reactor. Sang Ki Nam, Koshichi; Economou, Demetre J. // Journal of Applied Physics;3/1/2004, Vol. 95 Issue 5, p2272 

    A two-dimensional self-consistent simulation of a miniaturized inductively coupled plasma (mICP) reactor was developed. The coupled equations for plasma power deposition, electron temperature, and charged and neutral species densities, were solved to obtain the spatial distribution of an argon...

  • Continuous wave operation of injectorless quantum cascade lasers at low temperatures. Katz, Simeon; Friedrich, Andrea; Boehm, Gerhard; Amann, Markus-Christian // Applied Physics Letters;5/5/2008, Vol. 92 Issue 18, p181103 

    A continuous wave operating quantum-cascade-laser without injector is presented. The core design was taken from a low-threshold pulsed staircase laser. The active zone of one sample was optimized for low threshold current densities, using 60 periods and a low doping of 2.4×1010 cm-2/period....

  • Using IR laser radiation for backside etching of fused silica. Zimmer, K.; Böhme, R.; Rauschenbach, B. // Applied Physics A: Materials Science & Processing;Feb2007, Vol. 86 Issue 2, p409 

    Laser-induced backside etching of fused silica with gallium as highly absorbing liquid is demonstrated using pulsed infrared laser radiation. The influences of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography were studied and the...

  • Gain spectrum measurement using the segmented contact method with an integrated optical amplifier. Shahid, H.; Childs, D. T. D.; Majid, M. A.; Kennedy, K.; Airey, R.; Hogg, R. A.; Clarke, E.; Spencer, P.; Murray, R. // Journal of Applied Physics;2014, Vol. 115 Issue 16, p163105-1 

    The measurement of optical gain utilising a segmented contact and integrated optical amplifier is reported. We show that in a direct comparison of methods, the use of the integrated amplifier allows the gain spectrum to be deduced over wider spectral ranges and to lower carrier densities, as...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics