TITLE

Formation of ultrashallow p[sup +] layers in silicon by thermal diffusion of boron and by

AUTHOR(S)
Inada, T.; Kuranouchi, A.
PUB. DATE
April 1991
SOURCE
Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1748
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies the atomic and carrier-concentration profiles of boron-doped layers. Incorporation of boron atoms into silicon wafers; Change in crystallinity due to boron atom incorporation; Effects of rapid thermal annealing on the atomic and carrier concentration profiles.
ACCESSION #
4219588

 

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