TITLE

Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy

AUTHOR(S)
Sopanen, M.; Lipsanen, H.
PUB. DATE
December 1995
SOURCE
Applied Physics Letters;12/18/1995, Vol. 67 Issue 25, p3768
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of indium phosphide islands on (100) gallium arsenide by metalorganic vapor phase epitaxy. Effect of the growth temperature and substrate misorientation angle on island uniformity and size; Dependence of the island density on growth temperature; Relationship between the degree of uniformity and deposition rate.
ACCESSION #
4218243

 

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