TITLE

Electrical properties of heavily Si-doped (311)A GaAs grown by molecular beam epitaxy

AUTHOR(S)
Agawa, K.; Hirakawa, K.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1171
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electrical properties of heavily silicon-doped gallium arsenide on the gallium arsenide surfaces by molecular beam epitaxy. Changes in conduction type; Achievement of the highest hole density; Characterization of silicon in the doped p-type regime; Preparation of uniformly doped samples; Calibration of doping density of silicon.
ACCESSION #
4218188

 

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