Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

Androussi, Y.; Lefebvre, A.
August 1994
Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1162
Academic Journal
Examines the strain contrasts associated with three-dimensional coherently strained islands using transmission electron microscopy. Epitaxial growth of highly strained In[sub 0.45]Ga[sub 0.55]As layers on GaAs (001); Measurement of the elastic relaxation of the islands; Calibration of the indium composition.


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