TITLE

Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

AUTHOR(S)
Androussi, Y.; Lefebvre, A.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1162
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the strain contrasts associated with three-dimensional coherently strained islands using transmission electron microscopy. Epitaxial growth of highly strained In[sub 0.45]Ga[sub 0.55]As layers on GaAs (001); Measurement of the elastic relaxation of the islands; Calibration of the indium composition.
ACCESSION #
4218185

 

Related Articles

  • Strain relaxation behavior of In[sub x]Ga[sub 1-x]As quantum wells on vicinal GaAs (111)B substrates. Gutie´rrez, M.; Gonza´lez, D.; Arago´n, G.; Garcı´a, R.; Hopkinson, M.; Sa´nchez, J. J.; Izpura, I. // Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1541 

    A number of reports have suggested that InGaAs/GaAs (111)B strained layer epitaxy has the prospect of reaching a higher critical layer thickness than that which can be achieved for (001) substrates. This has motivated a study of the relaxation mechanism of InGaAs/GaAs (lll)B quantum wells with...

  • In-situ TEM straining experiments of Al films on polyimide using a novel FIB design for specimen preparation. Dehm, G.; Legros, M.; Heiland, B. // Journal of Materials Science;Jul2006, Vol. 41 Issue 14, p4484 

    In-situ transmission electron microscopy (TEM) straining experiments are tedious to perform but give invaluable insight into the deformation processes of materials. With the current interest in mechanical size-effects of nanocrystalline materials and thin metallic films, in-situ tensile testing...

  • HRTEM investigation of the epitaxial growth of scandate/titanate multilayers. Boese, Markus; Heeg, Tassilo; Schubert, Jürgen; Luysberg, Martina // Journal of Materials Science;Jul2006, Vol. 41 Issue 14, p4434 

    Despite their potential application in strain-engineered layer structures, the epitaxial growth of rare earth scandate films on cubic perovskite substrates is not fully understood to date. Here we report on the epitaxy of the orthorhombic GdScO3 and DyScO3 on (001) BaTiO3 and SrTiO3 thin films....

  • On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates. Cherkashin, N.; Hÿtch, M. J.; Houdellier, F.; Hüe, F.; Paillard, V; Claverie, A.; Gouyé, A.; Kermarrec, O.; Rouchon, D.; Burdin, M.; Holliger, P. // Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p141910 

    Measurements of strain and composition are reported in tensile strained 10- and 30-nm-thick Si:C layers grown by chemical vapor deposition on a Si (001) substrate. Total carbon concentration varies from 0.62% to 1.97%. Strain measurements were realized by high-resolution x-ray diffraction,...

  • Reduced effective misfit in laterally limited structures such as epitaxial islands. Christiansen, S.; Albrecht, M. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p574 

    Examines the reduced effective misfit in laterally limited epitaxial islands and mesa structures. Details on the correction function ratio; Comparison between constant and average strain energy density; Influence of islanding on misfit strain distribution of island and substrate.

  • Strain tensor elements for misfit-strained [hhk]-oriented cubic crystals. Caridi, E.A.; Stark, J.B. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1441 

    Calculates the strain tensor components for (hkk)-oriented cubic crystals with misfit-generated strain. Derivation of the tensor elements via minimization of the crystal strain energy; Manifestation of the strain components; Production of a tetragonal distortion for all (hhk)-grown layers in...

  • Growth of strained InGaAs layers on InP substrates. Okada, T.; Weatherly, G.C. // Journal of Applied Physics;3/1/1997, Vol. 81 Issue 5, p2185 

    Examines the role of tensile strain on the growth morphology and segregation of In1-xGaxAs alloys grown on InP substrates by molecular beam epitaxy. Facets on layers grown under tension; Confinement of composition segregation to peaks and valleys of faceted surfaces.

  • Superstrained superlattices: A processing approach. Dunstan, D. J.; Homewood, K. P. // Journal of Applied Physics;7/1/1989, Vol. 66 Issue 1, p462 

    Describes a proposed processing approach to producing superstrained quantum wells and superlattices. Limitations imposed on the use of the structures by critical thickness problems; Information on the thermal annealing of component elements in strained or unstrained superlattices.

  • High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate. Huang, F. Y.; Huang, F.Y.; Chu, M. A.; Chu, M.A.; Tanner, M. O.; Tanner, M.O.; Wang, K. L.; Wang, K.L.; U'Ren, G. D.; U'Ren, G.D.; Goorsky, M. S.; Goorsky, M.S. // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon-on-insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics