Epitaxial lateral overgrowth of silicon by chemical vapor deposition on ultrathin oxide layers

Shih, Y.C.; Liu, J.B.
August 1994
Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1142
Academic Journal
Describes the fabrication of silicon-on-insulator structures using low-pressure chemical vapor deposition system. Deposition of single-crystal silicon films on oxide layers; Dislocation densities of silicon-on-insulator on thin oxide; Observation of crystallographic defect; Proposed model to explain the defect structure and formation mechanism of thin film.


Related Articles

  • Seam line defects in silicon-on-insulator by merged epitaxial lateral overgrowth. Yang-Chin Shih; Jen-Chung Lou // Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1638 

    Fabricates silicon-on-insulator structures using epitaxial growth of silicon dioxide in chemical vapor deposition system. Achievement of a continuous epitaxial film over buried oxides; Observation of seam-like defect at the interfaces; Identification of a series of threading dislocations along...

  • Hydrogen as the cause of pit formation during laser recrystallization of silicon-on-insulator films. Willems, G. J.; Maes, H. E. // Journal of Applied Physics;11/1/1989, Vol. 66 Issue 9, p4444 

    Studies the formation of pits during laser recrystallization of silicon-on-insulator films. Overview of chemically vapor deposited (CVD) materials tested for their ability to induce pits; Hypothesis of growing gas bubbles; Ability of CVD materials to induce pits after an anneal treatment.

  • Soitec and Samsung Team Up for CMOS, SOI Devices. Chappell, Jeff // Electronic News;09/18/2000, Vol. 46 Issue 38, p60 

    Presents news briefs on worldwide electronic industries as of September 18, 2000. Details on the joint development program of Silicon-On-Insulator Technologies and Samsung Electronics Co. Ltd. to optimize silicon-on-insulator material for complementary metal oxide semiconductors; Launching of...

  • Silicon epitaxial growth on silicon-on-insulator structures by rapid thermal processing chemical vapor deposition. Hsieh, T. Y.; Jung, K. H.; Kwong, D. L. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2425 

    We have used rapid thermal processing chemical vapor deposition (RTPCVD) for silicon epitaxial growth on silicon-on-insulator (SOI) substrates. The surface morphology of SOI rapid thermal annealed in different ambients was also examined. A short, high-temperature H2 anneal formed an undulating...

  • Consideration on the void generation mechanism in electron-beam recrystallized silicon-on-insulator films. Horita, Susumu; Ishiwara, Hiroshi // Journal of Applied Physics;3/1/1989, Vol. 65 Issue 5, p2057 

    Investigates void generation phenomena in silicon-on-insulator films in the pseudoline electron-beam recrystallization method, in which a linear molten zone is formed by a fast-scanned spot electron beam. Purpose of the melting and recrystallization technique using energy sources; Deposition of...

  • InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition. Yi, S. S.; Girolami, G.; Amano, J.; Saif Islam, M.; Sharma, S.; Kamins, T. I.; Kimukin, I. // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p133121 

    The heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high-performance III-V materials with Si technology. We report epitaxial growth on (111)-oriented Si surfaces of highly aligned, single crystalline InP nanowires by chemical vapor deposition...

  • Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior. Sik Hwang, Wan; Remskar, Maja; Yan, Rusen; Protasenko, Vladimir; Tahy, Kristof; Doo Chae, Soo; Zhao, Pei; Konar, Aniruddha; (Grace) Xing, Huili; Seabaugh, Alan; Jena, Debdeep // Applied Physics Letters;7/2/2012, Vol. 101 Issue 1, p013107 

    We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS2. The Schottky-barrier FETs demonstrate ambipolar behavior and a high (∼105×) on/off current ratio at room temperature with current saturation. The behavior...

  • Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III-V Compound Semiconductors-to-Silicon Photonic Integrated Circuits. DI LIANG; FANG, ALEXANDER W.; PARK, HYUNDAI; REYNOLDS, TOM E.; WARNER, KEITH; OAKLEY, DOUGLAS C.; BOWERS, JOHN E. // Journal of Electronic Materials;Oct2008, Vol. 37 Issue 10, p1552 

    We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer of 60 nm demonstrates sufficient capability for gas byproduct diffusion and...

  • Planar silicon nitride mid-infrared devices. Tai Lin, Pao; Singh, Vivek; Kimerling, Lionel; Murthy Agarwal, Anuradha // Applied Physics Letters;6/24/2013, Vol. 102 Issue 25, p251121 

    Integrated mid-infrared devices including (i) straight/bent waveguides and (ii) directional couplers are demonstrated on silicon nitride (SiN) thin films prepared by optimized low-pressure chemical vapor deposition. The deposited SiN film has a broad spectral transparency from visible up to a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics