TITLE

Epitaxial lateral overgrowth of silicon by chemical vapor deposition on ultrathin oxide layers

AUTHOR(S)
Shih, Y.C.; Liu, J.B.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1142
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the fabrication of silicon-on-insulator structures using low-pressure chemical vapor deposition system. Deposition of single-crystal silicon films on oxide layers; Dislocation densities of silicon-on-insulator on thin oxide; Observation of crystallographic defect; Proposed model to explain the defect structure and formation mechanism of thin film.
ACCESSION #
4218178

 

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