Microwave performance of a 0.25 mum gate AlGaN/GaN heterostructure field effect transistor

Khan, M. Asif; Kuznia, J.N.
August 1994
Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1121
Academic Journal
Details the fabrication of an AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance. Exhibition of pinch-off and low parasitic output conductance; Measurement of the cutoff frequency and the maximum oscillation frequency; Potential of AlGaN/GaN HFET for microwave and millimeter wave application.


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