TITLE

Core-level photoemission and the structure of the Si/SiO[sub 2] interface: A reappraisal

AUTHOR(S)
Holl, Mark M. Banaszak; Sunghee Lee
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1097
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Proposes a model for the silicon/silicon dioxide interface. Derivation of silicon/silicon dioxide interfaces; Photoemission spectroscopy of spherosiloxane cluster; Exploration of the implications of assignments for structural models; Consistency of the models with the photoemission data.
ACCESSION #
4218162

 

Related Articles

  • Scanning tunneling microscopy investigation of the microtopography of SiO[sub 2] and Si surfaces at the Si/SiO[sub 2] interface in SIMOX structures. Vyalykh, D. V.; Fedoseenko, S. I. // Semiconductors;Jun99, Vol. 33 Issue 6, p654 

    The microtopography of silicon and silicon oxide surfaces in SIMOX structures is investigated by scanning tunneling microscopy. A method of using scanning tunneling microscopy to study Si/SiO[sub 2] interfacial roughness is developed for this purpose. It is shown that the relief of the silicon...

  • Si/SiO2 interface roughness: Structural observations and electrical consequences. Carim, A. H.; Bhattacharyya, Anjan // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p872 

    Thin oxides (on the order of 80-90 Å) grown at 900 °C in dry O[sub 2] diluted with Ar were examined in cross section by high-resolution transmission electron microscopy. Varying degrees of roughness at the substrate/oxide interface were observed, depending on the processing sequence...

  • Nondestructive Diagnostics of Microchannel (Macroporous) Silicon by X-ray Topography. Astrova, E. V.; Remenyuk, A. D.; Tkachenko, A. G.; Shul�pina, I. L. // Technical Physics Letters;Dec2000, Vol. 26 Issue 12, p1087 

    It is demonstrated that X-ray topography can be used for imaging the boundary between a microchannel silicon layer and a substrate, evaluating the quality of this interface, determining the channel depth, and revealing mechanical stresses. This technique can be used for nondestructive monitoring...

  • Switching Effect in Si�CdS Heterojunctions Synthesized in Highly Nonequilibrium Conditions. Belyaev, A. P.; Rubets, V. P. // Semiconductors;Jul2002, Vol. 36 Issue 7, p789 

    The results of the investigation of electrical properties and processes of the formation of heterojunctions on crystalline Si substrate cooled to negative centigrade temperatures is reported. The data of technology, electron diffraction analysis, and electrical investigations are given. The...

  • Measurement of mobility-lifetime product in hydrogenated amorphous silicon p-i-n type diodes. Könenkamp, R.; Hermann, A. M.; Madan, A. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p405 

    We have applied the junction recovery technique to different configurations of hydrogenated amorphous silicon type diodes and show that the recovered charge consists predominantly of holes. The technique is used for the measurement of the mobility-lifetime product for recombination, which was...

  • Characterization of breakdown phenomena in light emitting silicon n+p diodes. Snyman, Lukas W.; Aharon, Herzl // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2953 

    Focuses on a study of the breakdown phenomena occurring in silicon p-n junctions. Use of an electron beam to map localized charge multiplication; Observation of current filaments in the junction; Dimension of thew elements; Factor influencing the distribution of current filaments.

  • Imaging the variation in band bending across a silicon pn junction surface using spectromicroscopy. Phaneuf, R.J.; Kan, H.-C. // Journal of Applied Physics;7/15/2000, Vol. 88 Issue 2, p863 

    Characterizes lateral silicon pn junction arrays fabricated on a Si surface using a synchrotron-based scanning photoelectron microscope. Variation in energy dependent contrast shown by the Si 2p images; Capability of the microscope in imaging variations in dopant concentration.

  • Defects in planar Si pn junctions studied with electrically detected magnetic resonance. Wimbauer, T.; Ito, K.; Mochizuki, Y.; Horikawa, M.; Kitano, T.; Brandt, M. S.; Brandt, M.S.; Stutzmann, M. // Applied Physics Letters;4/17/2000, Vol. 76 Issue 16 

    We report electrically detected magnetic resonance (EDMR) measurements on planar Si pn junctions which were isolated via local oxidation of silicon (LOCOS). The investigations of the as-fabricated diodes show the presence of various defects. We observe P[sub b] centers at the boundary to the...

  • Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer. Almeida, J.; Coluzza, C.; dell'Orto, T.; Margaritondo, G.; Terrasi, A.; Ivanco, J. // Journal of Applied Physics;1/1/1997, Vol. 81 Issue 1, p292 

    Investigates the effect of thin silicon nitride intralayer and plasma passivation on semiconductor interfaces. Deposition of gold to study the Schottky formation process; Evaluation of the barrier modification; Interplay of factors related to the Schottky barrier height modification.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics