Reduction of Be out-diffusion from heavily doped GaAs:Be layers by pseudomorphic

Zhang, K.; Chen, Y.C.
August 1994
Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p872
Academic Journal
Evaluates the reduction of beryllium (Be) out-diffusion from heavily doped gallium arsenide:Be layers by pseudomorphic In[sub x]Ga[sub 1-x]As barrier layers. Application of ion mass spectrometry; Exposure of samples to rapid thermal annealing; Comparison of Be diffusion beyond InGaAs layers in structures with varying values.


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