TITLE

InGaAs/InP quantum wells with thickness modulation

AUTHOR(S)
Brasil, M.J.S.P.; Bernussi, A.A.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p857
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the optical properties of lattice-matched indium gallium arsenide/indium phosphide (InP) quantum wells. Application of metalorganic molecular beam epitaxy; Variation of quantum well thickness; Observation of elongated features on the InP buffer layers.
ACCESSION #
4218127

 

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