Comment on: 'Random telegraph signals arising from fast interface states in

Uren, M.J.; Ming-Horn Tsai
September 1993
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1443
Academic Journal
Comments on the mensuration of random telegraph signals (RTS) from fast silicon-silicon oxide interface states from slow states. Use of high sampling rates; Features of RTS published earlier; Description of interface states with common chemical nature and environment.


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