TITLE

High quality epitaxy of YBa[sub 2]Cu[sub 3]O[sub 7--x] on silicon-on-sapphire with the multiple

AUTHOR(S)
Copetti, C.A.; Soltner, H.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1429
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Improves the epitaxy of YBa[sub 2]Cu[sub 3]O[sub 7-x] on silicon-on-sapphire using the combined buffer layer yttria stabilized zirconia (YSZ)/cerium oxide. Importance of YSZ in removing silicon oxides; Revelation of high crystalline perfection of YBa[sub 2]Cu[sub3] O[sub 7-x] films; Measurement of channeling yield for barium signal.
ACCESSION #
4218100

 

Related Articles

  • Cerium oxide nanocrystals for nonvolatile memory applications. Shao-Ming Yang; Chao-Hsin Chien; Jiun-Jia Huang; Tan-Fu Lei; Ming-Jinn Tsai; Lurng-Shehng Lee // Applied Physics Letters;12/24/2007, Vol. 91 Issue 26, p262104 

    The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin CeO2 film on the SiO2 tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density...

  • Epitaxial growth of CeO2 layers on silicon. Inoue, T.; Yamamoto, Y.; Koyama, S.; Suzuki, S.; Ueda, Y. // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1332 

    CeO2 layer was epitaxially grown for the first time on both (111) and (100) silicon substrates by vacuum evaporation. Characterization using Rutherford backscattering and reflection high-energy electron diffraction proved that a CeO2 layer on (111) Si has considerably good crystalline quality,...

  • Adhesion in growth of defect-free silicon over silicon oxide. Raidt, H.; Köhler, R.; Banhart, F.; Jenichen, B.; Gutjahr, A.; Konuma, M.; Silier, I.; Bauser, E. // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p4101 

    Examines adhesion in growth of defect-free silicon over silicon oxide grown by liquid phase epitaxy. Discussion on the liquid phase epitaxy semiconductor-on-insular (SOI) layer systems; Description of the growth of SOI layers from solution; Experimental observation and result of the study.

  • Epitaxial Y-stabilized ZrO[sub 2] films on silicon: Dynamic growth process and interface structure. Wang, S. J.; Ong, C. K. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2541 

    We have studied the initial stage of the growth of yttria-stabilized zirconia (YSZ) films on natively oxidized (100) Si wafer by pulsed-laser deposition. X-ray photoelectron spectroscopy and high-resolution electron microscopy show that, for the first few monolayers of crystalline YSZ deposited...

  • Growth-rate induced epitaxial orientation of CeO2 on Al2O3(0001). Kuchibhatla, Satyanarayana V. N. T.; Nachimuthu, P.; Gao, F.; Jiang, W.; Shutthanandan, V.; Engelhard, M. H.; Seal, S.; Thevuthasan, S. // Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p204101 

    High-quality CeO2 films were grown on Al2O3(0001) substrates using oxygen plasma-assisted molecular beam epitaxy. The epitaxial orientation of the films is found to be CeO2(100) and CeO2(111) at low (<8 Ã…/min) and higher growth rates (>12 Ã…/min), respectively. CeO2(100) film grows as...

  • Effect of SiO2 content on the ionic conductivity of Ce0.8Gd0.2O2-δ ceramics. Zhang, T. S.; Ma, J.; Kong, L. B.; Chan, S. H. // Journal of Materials Science;Oct2004, Vol. 39 Issue 20, p6371 

    Discusses the effect of silicon oxide content on the ionic conductivity of ceria-based solutions and Gd-doped ceria ceramics. Electrical properties of the material; Phase composition; Ball milling process; Grain boundary conduction.

  • A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100). Barnes, R.; Starodub, D.; Gustafsson, T.; Garfunkel, E. // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p044103 

    40 Ã… thick cerium oxide films have been grown on Si(100) substrates via physical vapor deposition of cerium metal in an oxygen background. The films have been characterized for their composition and thermal properties upon deposition and under different annealing conditions via x-ray...

  • Spectral components that form UV absorption spectrum of Ce and Ce(IV) valence states in matrix of photothermorefractive glasses. Efimov, A.; Ignat'ev, A.; Nikonorov, N.; Postnikov, E. // Optics & Spectroscopy;Sep2011, Vol. 111 Issue 3, p426 

    We have measured the UV absorption spectra of photothermorefractive glasses of the system NaO-ZnO-AlO-NaF-SiO doped by cerium oxide in the range of (2.8-5.0) × 10 cm (360-200 nm). The spectra have been processed by the method of dispersion analysis based on the analytical convolution model...

  • Ethanol Steam Reforming: Higher Dehydrogenation Selectivities Observed by Tuning Oxygen-Mobility and Acid/Base Properties with Mn in CeO·MnO·SiO Catalysts. Ribeiro, Mauro; Jacobs, Gary; Davis, Burtron; Mattos, Lisiane; Noronha, Fábio // Topics in Catalysis;Dec2013, Vol. 56 Issue 18-20, p1634 

    Doping CeO-SiO catalysts with Mn was found to increase H selectivity and decrease ethylene selectivity. In the presence of SiO, relatively high surface areas (~150-190 m g range) were stabilized with these coprecipitated catalysts after calcining at 500 °C for 5 h. By means of a combination...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics