Ge epilayer of high quality on a Si substrate by solid-phase epitaxy

Liu, W.S.; Chen, J.S.
September 1993
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1405
Academic Journal
Examines germanium epilayer on a silicon substrate by solid-phase epitaxy. Oxidation of the silicon substrate in a wet ambient; Observation of the crystalline quality of germanium epilayer; Analysis of oxidized samples using backscattering spectrometry, transmission electron microscopy, and x-ray double crystal diffractometry.


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