Chemical vapor deposition of rough-morphology silicon films over a broad temperature range

Dana, S.S.; Anderle, M.
September 1993
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1387
Academic Journal
Examines the growth of rough polycrystalline silicon films over a broad temperature range using chemical vapor deposition. Combination of nucleation-controlled initial growth; Domination of growth by surface reaction; Fabrication of rough polysilicon films employing reactive ion etching.


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