TITLE

Rapid thermal annealing of Si-implanted GaAs using Ga-doped spin-on glass films

AUTHOR(S)
Nishitsuji, Mitsuru; Tamura, Akiyoshi
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1384
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines rapid thermal annealing of silicon-implanted gallium arsenide (GaAs) using Ga-doped spin-on glass films. Kinds of films formed by the chemical vapor deposition method; Characterization of annealed GaAs layers; Use of secondary ion mass spectroscopy to investigate atomic behavior at insulating film/GaAs interface during annealing.
ACCESSION #
4218071

 

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