TITLE

Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy

AUTHOR(S)
Hobart, K.D.; Godbey, D.J.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1381
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines antimony (Sb)-doping in silicon(100) films grown at low temperature by molecular beam epitaxy. Characterization of the doping profiles; Increase in the surface segregation of Sb; Decrease in surface segregation as during surface concentration of Sb at one monolayer.
ACCESSION #
4218068

 

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