TITLE

Giant recombination centers in Al[sub 0.10]Ga[sub 0.90]As grown by metalorganic chemical vapor

AUTHOR(S)
Zhang, J.; Keyes, B.M.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1369
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates electron traps in selenium-doped metalorganic chemical vapor deposition (MOCVD)-grown aluminum-gallium-arsenic epitaxial films. Materials for gallium, aluminum and arsenic; Use of palladium-purified hydrogen for films grown in vertical MOCVD reactor; Observation of time-resolved photoluminescence in double heterojunction devices.
ACCESSION #
4218052

 

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