Characteristics of electron traps in In[sub 0.5]Ga[sub 0.5]P generated by recombination enhanced

Kim, M.G.; Kwon, S.D.
September 1993
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1366
Academic Journal
Observes a type of intrinsic defect in indium-gallium-phosphorus generated by recombination enhanced defect reaction (REDR) mechanism. Increase of REDR concentrations; Details on the electrical properties of REDR; Evolution of electron traps shown by deep level transient spectroscopy of a light emitting diode.


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