TITLE

Confinement of high Be doping levels in AllnAs/GalnAs npn heterojunction bipolar transistors by

AUTHOR(S)
Metzger, R.A.; Hafizi, M.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1360
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports high beryllium (Be) doping levels in AlInAs/GaInAs heterojunction bipolar transistors over a temperature range. Necessity of the reduction of base resistance and base width in heterojunction bipolar transistors; Effect of excess type III vacancy site on transistor current gain; Segregation of Be in gallium arsenide.
ACCESSION #
4218041

 

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