Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state

Faist, Jerome; Capasso, Federico
September 1993
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1354
Academic Journal
Demonstrates the measurement of the intersubband lifetime in semiconductor quantum wells. Importance of understanding relaxation mechanism of electrons inside a quantum well; Predictions of Ferreira and Bastard based on theories; Measurement of the absorption spectra using Nicolet 800 Fourier transform infrared spectrometer.


Related Articles

  • Triple quantum well electron transfer infrared modulator. Berger, V.; Dupont, E.; Delacourt, D.; Vinter, B.; Vodjdani, N.; Papuchon, M. // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2072 

    Presents a bicolor infrared modulator using intersubband absorptions in quantum wells. Use of the electric field to transfer carriers into the well; Representation of the conduction band structure; Generation of the absorption spectra in a Fourier transform infrared spectrometer.

  • Infrared absorption of holes in a parabolic quantum well. Sundaram, M.; Allen Jr., S.J. // Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2226 

    Observes the infrared absorption of holes in a wide graded Al[sub x]Ga[sub 1-x]As parabolic quantum well. Single frequency of the infrared absorption; Independence from the number of holes in the well; Determination of the resonant absorption frequency by the light hole mass.

  • Modeling of self-electro-optic-effect devices. Mares, P. J.; Chuang, S. L. // Journal of Applied Physics;7/15/1993, Vol. 74 Issue 2, p1388 

    Compares a theoretical model with a set of experimental data on the electro-optical properties of quantum-well modulators and input power versus output characteristics of interband self-electro-optic-effect (SEED) devices. Outline and results for interband electroabsorption in...

  • Intersubband absorption in Si/Si1-x-yGexCy quantum wells. Boucaud, P.; Lourtioz, J.-M.; Julien, F. H.; Warren, P.; Dutoit, M. // Applied Physics Letters;9/16/1996, Vol. 69 Issue 12, p1734 

    Intersubband absorption in the valence band of Si–Si1-x-yGexCy multiquantum wells is reported. The quantum wells with x≊17% and y≊1% and thicknesses around 3 nm are grown pseudomorphically by rapid thermal chemical vapor deposition on Si(001). The carbon is incorporated in...

  • Linewidth of the infrared absorption spectra due to bound-to-continuum transition in GaAs/Al[sub x]Ga[sub 1-x]As multiple quantum well structures. He, Yunpeng; Zhu, Q. S.; Zhong, Z. T.; Zhang, G. Z.; Xiao, J.; Cao, Z. P.; Sun, X. H.; Yang, H. Z. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    We have observed an extremely narrow absorption spectrum due to bound-to-continuum transition in GaAs/Al[sub x]Ga[sub 1-x]As multiple quantum wells (MQWs). Its linewidth is only about one tenth of the values reported previously. Our calculation indicates that the broadening of the excited state...

  • Effect of sublevel coupling on the line shape of the intersubband transitions in double quantum.... Zaluzny, M. // Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1817 

    Investigates the effect of sublevel coupling on the line shape of the intersubband transitions in double quantum wells. Location of the occurrence of the double peak structure in the absorption spectrum; Check on the validity of the tight-binding expressions.

  • Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum.... Gomatam, Badri N.; Anderson, Neal G. // Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3616 

    Compares the electroabsorption of tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells. Use of thin active regions to avoid strain relaxation in the tensile-strength quantum wells; Potential of waveguide modulators utilizing the Auger electron microscopy; Increased modulation...

  • Photoinduced intersubband absorption in Si/SiGe quantum wells. Boucaud, P.; Gao, L. // Applied Physics Letters;11/13/1995, Vol. 67 Issue 20, p2948 

    Investigates the valence band mixing of SiGe quantum wells using photoinduced intersubband absorption (PIA). Development of PIA technique from studying the intersubband absorption in the conduction band of undoped GaAs quantum wells; Information on the valence structure provided by PIA;...

  • Direct measurement of population-induced broadening of quantum well intersubband transitions. Yuanjian Xu; Almogy, Gilad // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p838 

    Examines the dependence of the absorption spectral linewidth of quantum well (QW) intersubband transitions on the electron population in the well. Accounts on the single band model; Use of external applied bias to shift the population between the coupled QW; Measurement of the absorption with a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics