TITLE

Transient electroluminescence from hole transporting emitting layer in nanosecond region

AUTHOR(S)
Hosokawa, Chishio; Tokailin, Hiroshi
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1322
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observes transient electroluminescence (EL) for an organic thin film cell with hole transporting emitting layer using short voltage pulse measurements. Observation of response time in organic EL; Attribution of the carrier transit time; Determination of hole mobility in 120-nanometer-thick emitting layer.
ACCESSION #
4218004

 

Related Articles

  • Transient laser-induced voltages in room-temperature films of YBa2Cu3O7-x. Tate, K. L.; Johnson, R. D.; Chang, C. L.; Hilinski, E. F.; Foster, S. C. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4375 

    Describes a study on the transient-induced electrical signals with peak voltages in room temperature thin films of YBa[sub2]Cu[sub3]O[sub7-x] in the absence of an applied current. Effects of illuminating the films through the substrate on signal polarity; Measurement of electrical signal; Power...

  • The temperature dependence of the transient current in ferroelectric Pb(ZrxTi1-x)O3 thin films... Hong-ming Chen; Lee, Joseph Ya-min // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3478 

    Studies the temperature dependence of the transient current in ferroelectric Pb(Zr0.53Ti0.47)O3 thin film capacitors. Examination of the current density versus time characteristics in the temperature range from room temperature to 140 degrees Celsius; Enhancement in the emission rate of...

  • Contactless microwave study of dispersive transport in thin film CdSe. Grabtchak, Serguei Yu; Cocivera, Michael // Journal of Applied Physics;1/15/1996, Vol. 79 Issue 2, p786 

    Presents a study which measured the light-induced transients in the power absorbed by thin films of polycrystalline CdSe using the contactless microwave technique. Review of related literature; Theoretical background; Description of the experimental setup; Results and discussion.

  • Experimental observation of conductance transients in Al/SiN[sub x]:H/Si.... Duenas, S.; Pelaez, R. // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p826 

    Examines the room temperature conductance transients in the silicon nitride and hydrogen/silicon metal-insulator-semiconductor structures. Deposition of silicon nitride thin films on silicon; Variation of the shape of the transient conductance with the frequency; Accounts on disorder-induced...

  • Analysis of transient photocurrents in Cu(In,Ga)Se2 thin film solar cells. Nishitani, M.; Negami, T.; Kohara, N.; Wada, T. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3572 

    Discusses a transient photocurrent measurement with a zero-field time-of-flight configuration. Carrier transport on Cu(In,Ga)Se2 films; Use of a time-dependent diffusion current equation; Obtaining of the diffusion coefficient, minority carrier lifetime, and recombination velocity in the...

  • Photoeffects in WO3/GaAs electrode. Yoon, Ki Hyun; Lee, Jeong Won; Cho, Yong Soo; Kang, Dong Heon // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6813 

    Deals with a study which investigated the photoeffects of a p-type gallium arsenide coated with WO[sub3] thin film as a function of film thickness and photoresponse transients of the WO[sub3]/gallium arsenide electrode. Measurement of the photoelectrochemical characteristics of saturated...

  • Mechanism of anomalous photoinduced transient current peak in amorphous silicon thin-film transistor. Chu, M. H.; Wu, C. H. // Journal of Applied Physics;5/1/1997, Vol. 81 Issue 9, p6461 

    The photoinduced transient current from an amorphous silicon thin-film transistor is computed and the mechanism described in terms of trap-state filling dynamics. The direction of the current flow and the location of the transient peak depends strongly on the distributions of donorlike and...

  • Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge... Thurzo, I.; Teramura, S.; Durny, R.; Naádazdy, V.; Kumeda, M.; Shimizu, T. // Journal of Applied Physics;11/1/1997, Vol. 82 Issue 9, p4372 

    Reports on the measurement of feedback charge capacitance-voltage characteristics and spectra of charge deep-level transient spectroscopy on hydrogenated amorphous silicon (a-Si:H) based metal/insulator/semiconductor structures. Confirmation of the inhomogeneous density of states in a-Si:H;...

  • Improved drive voltages of organic electroluminescent devices with an efficient p-type aromatic diamine hole-injection layer. Ganzorig, Chimed; Fujihira, Masamichi // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    An SbCl[sub 5]-doped N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) thin film was studied as a hole-injection layer in low-molecular-weight organic electroluminescent (EL) devices. EL characteristics of devices with a TPD hole-injection layer...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics