TITLE

Material properties of Ga[sub 0.47]In[sub 0.53]As grown on InP by low-temperature molecular beam

AUTHOR(S)
Kunzel, H.; Bottcher, J.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1347
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of undoped Ga[sub 0.47]In[sub 0.53]As layers by molecular beam epitaxy. Match of the molecular beam epitaxy lattice to InP at substrate temperatures; Observation of the widening of the vertical lattice parameter; Increase of the arsenic content at low growth temperature.
ACCESSION #
4217971

 

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