TITLE

Bias dependence of responsivity and transport in asymmetric quantum well infrared detectors

AUTHOR(S)
Fraenkel, A.; Brandel, A.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1341
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the bias dependence of responsivity and transport in asymmetric GaAs/AlGaAs quantum well infrared detectors. Utilization of the usual bound-to-continuum transition; Analysis of the current responsivity asymmetry with regard to the voltage polarity; Comparison of the rectangular wells saturation in bias polarities.
ACCESSION #
4217969

 

Related Articles

  • Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband.... Karunasiri, Gamani; Jin Suk Park; Chen, John; Shih, Robert; Scheihing, J.F.; Dodd, M.A. // Applied Physics Letters;10/30/1995, Vol. 67 Issue 18, p2600 

    Examines the fabrication of infrared detector using electron intersubband transition in a InGaAs/GaAs quantum well structure. Observation of nominal absorption peak with polarized light in the layer plane; Presentation of intersubband spin-flip transitions; Demonstration of sensitive quantum...

  • Normal incidence infrared detector using p-type SiGe/Si multiple quantum wells. Park, J.S.; Karunasiri, R.P.G. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p103 

    Measures the photoresponse of p-type silicon (Si) germanium/Si multiple quantum well infrared (IR) detectors as a function of incidence beam polarization. Observation on the photoresponse peak at 8.6 micrometer; Direction of the polarized beam to the growth plane; Use of normal incidence IR...

  • High contrast polarization sensitive quantum well infrared photodetectors. Antoni, Thomas; Nedelcu, Alexandru; Marcadet, Xavier; Facoetti, Hugues; Berger, Vincent // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p201107 

    The responsivity of polarization sensitive quantum well infrared photodetectors with small pixel size (down to 20 μm) is investigated. It is shown that pixels suitable for integration into very large focal plane arrays (1000×1000) can discriminate the polarization of the incoming signal....

  • Exchange interaction effects in quantum well infrared detectors and absorbers. Choe, J.-W.; O, Byungsung; Bandara, K. M. S. V.; Coon, D. D. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1679 

    Infrared excitation energies between the ground-state subband and the first excited-state subband in quantum wells are analyzed including the effect of exchange interactions on the ground-state subband. Analytic and numerical calculations relevant to infrared absorption and infrared detection...

  • Two-color GaAs/(AlGa)As quantum well infrared detector with voltage-tunable spectral sensitivity.... Kheng, K.; Ramsteiner, M. // Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p666 

    Presents measurements on a GaAs:Si/(AlGa)As quantum well intersubband detector structure. Dependence of the photoresponse on bias voltage; Description of the detector structure; Similarity between frequency dependence of the theoretical absorption to calculated photoconductive responsivity.

  • Two-color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells. Tsai, K.L.; Chang, K.H.; Lee, C.P.; Huang, K.F.; Tsang, J.S.; Chen, H.R. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3504 

    Examines two-color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells. Comparison between the quantum wells response peak; Fabrication of detectors to study bias dependent behavior; Explanation of the behavior using the current continuity concept.

  • Capture time versus barrier thickness in quantum-well structures measured by infrared.... Rosencher, E.; Luc, F. // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3312 

    Examines the use of photoconductive gain measurements in quantum well (QW) infrared detectors to determine the variation of electron capture time. Relationship between capture time and multi-QW period; Consistency with the quantum mechanical description of the capture process; Dependence of...

  • Voltage tunable three-color quantum well infrared photodetector. Tidrow, M.Z.; Choi, K.K.; Lee, C.Y.; Chang, W.H.; Towner, F.J.; Ahearn, J.S. // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1268 

    Demonstrates the voltage tunable three-color quantum well infrared photodetector. Use of electron intersubband transitions in a coupled asymmetric double quantum well superlattice; Characterization of the infrared photocurrent spectrum using a blackbody monochromator source; Resolution of the...

  • Near-unity quantum efficiency of AlGaAs/GaAs quantum well infrared detectors using a waveguide.... Andersson, J.Y.; Lundqvist, L. // Applied Physics Letters;8/12/1991, Vol. 59 Issue 7, p857 

    Analyzes the quantum well infrared detectors based on a waveguide with a doubly periodic grating coupler. Mechanisms of coupling radiation into quantum well detectors; Basis for the mathematical modeling of quantum efficiency; Use of grating monochromator with a glowbar source.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics