TITLE

Shifted x-ray photoelectron peak in molecular beam epitaxial GaAs grown at 200 degrees C

AUTHOR(S)
Look, D.C.; Grant, J.T.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1329
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the molecular beam epitaxy of gallium arsenide grown at 200 degrees Celsius using shifted x-ray photoelectron spectroscopy. Reduction of effective surface potential energy; Use of Hall effect parameters and absorption measurements in the Poisson analysis; Discussion of the fermi-level-controlling defect.
ACCESSION #
4217962

 

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