TITLE

High frequency characteristics of in-plane-gate transistors

AUTHOR(S)
McLean, J.S.; Wieck, A.D.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1324
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the high frequency characteristics of directly written in-plane-gate (IPG) field effect transistors fabricated using focused ion beams. Use of the direct wafer probing technique; Impact of parasitic elements on the high frequency operation of the IPG transistor current generation; Analysis of the independent transconductance.
ACCESSION #
4217957

 

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