TITLE

Reduction of recombination-enhanced diffusion of Be in InGaAs strained layer

AUTHOR(S)
Uematsu, Masashi; Wada, Kazumi
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1322
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the reduction of recombination-enhanced impurity diffusion (REID) of beryllium (Be) in InGaAs strained layer. Introduction of an InGaAs strained layer into the p-n junction of Esaki tunnel diodes; Analysis of the Be REID coefficients; Implication of the electron device degradation under operation.
ACCESSION #
4217956

 

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