Anomalous diffusion of fluorine in silicon

Jeng, S.-P.; Ma, T.-P.
September 1992
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1310
Academic Journal
Examines the anomalous diffusion of ion implanted fluorine (F) in silicon (Si). Use of secondary ion mass and thermal desorption spectroscopy; Characterization of the anomalous out-diffusion behavior; Reaction of migrant F species with native oxide and Si; Correlation between the Si oxyfluoride and thermally activated anomalous F migration.


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